(Ga,Mn)As磁电输运性质的研究进展

Research Progress in Magneto-transport Properties of(Ga,Mn)As

综述了Ⅲ-Ⅴ族稀磁半导体(Ga,Mn)As磁电性质的研究进展,尤其是(Ga,Mn)As单层膜和多层膜结构的磁电输运性质的详细研究状况。关于(Ga,Mn)As的结构与物理性质的信息可由单层膜的反常霍尔效应、平面霍尔效应、电阻对温度的依赖关系与磁阻各向异性等磁电输运性质测量得到;而多层膜中观察到的自旋阀效应、自旋相关散射与层间交互耦合等现象,对加深稀磁半导体的基本物性认识、拓展稀磁半导体的实际应用空间非常重要。最后总结并展望了(Ga,Mn)As未来的发展趋势。

Abstract Research progress in electric and magnetic properties of [I]-V diluted magnetic semiconductor （Ga, Mn） As, especially the transport properties of single-layered and muhilayered （Ga, Mn）As structures are reviewed. In- formation about the structural and physical properties of （Ga,Mn）As can be obtained from the measurements of ano- malous Hall effect, planar Hall effect, temperature dependence of resistance and anisotropy of magneto-resistance in single-layered （Ga, Mn）As, while the discoveries of the spin valve effect, spin-dependent scattering and inter-layer ex- change coupling（IEC） in muhilayered （Ga,Mn） As structures are important for both fundamental understanding and potential applications of （Ga, Mn） As materials. In the end the future development of （Ga, Mn）As-based structures are summarized and prospected.