低介电聚酰亚胺的制备及研究进展

Preparation and Development of Polyimide with Low-permittivity

介绍了近年来国内外低介电常数聚酰亚胺(PI)及其复合材料的制备方法,重点讨论了介孔氧化硅、二氧化硅管和多面体低聚倍半硅氧烷(POSS)在降低PI介电常数方面的应用,并对低介电常数聚酰亚胺材料的发展前景进行了展望,指出将多孔材料添加到PI中,形成具有骨架结构的孔洞,所制备出的复合材料,具有较低介电常数的同时也有较好的力学性能,为低介电PI材料的制备提供了一条新思路。

The research progresses for the low dielectric constant polyimide and the composites are reviewed in this paper. The mesoporous silica, the silica tube and the polyhedral oligomeric silsesquioxane are discussed in the context of decreasing the dielectric constant of PI, and the prospects for the development of low dielectric constant PI materials The preparation by adding porous materials into PI can produce pores with supporting structures, leading to low dielectric properties and good mechanical properties of the composite. It is a new way to prepare PI of low dielectric constant.