摘要
针对CCD片上放大器的寿命进行了研究。通过设计独立的MOSFET,使用衬底电流模型进行热载流子效应分析,研究其特性参数Gm退化量与退化时间关系,由此评价组成CCD片上放大器的寿命。研究结果表明,CCD片上放大器寿命随着栅长的减小而降低,制作LDD结构可提高CCD片上放大器寿命。
The life of the of Gm degradation and degradati CCD on-chip amplifiers is studied. The relation between the characteristic parameters on time is found through hot carrier effect analysis using substrate current model on a tailor-made MOSFET to determine the composition of CCD on-chip amplifier life. The results show that the service life of CCD on-chip amplifiers decreases with the gate length, and the LDD structure can prolong the CCD chip am- plifier service life.
出处
《电子科技》
2014年第4期69-71,75,共4页
Electronic Science and Technology
