KTiOPO_4晶体生长形态和生长缺陷研究

Investigation on the Growth Morphology and Defects of KTiOPO_4 Crystal

本文系统研究了助熔剂法生长的KTiOPO_4晶体的生长形态和生长缺陷,分析了云雾状包藏、添晶、生长条纹、生长扇形界及着色等宏观生长缺陷产生的原因,提出了工艺上的改进办法,本文还用化学侵蚀法在光学显微镇下观测到KTiOPO_4晶体各显现晶面的位错蚀象,计算了各晶面位错密度的相对大小。

The growth morphology and defects of KTiOPO_4 crystal grown by flux method are investigated systematically in this paper. The reasons for leading to microscopic defects such as cioudlike inclu- sion, parasites, growth striation, growth sectors and colours are analyzed and the methods for im- provement in growth process are approached. By means of optical microscope, the etch-pits on crys- tal faces are observed and the density of dislocation in different faces is counted.