摘要
本文研究了Ti/Sr比对低温一次烧结的SrTiO_3陶瓷晶界层电容器材料性能和显微结构的影响.结果发现Ti/Sr比在一定范围内变化时,不影响材料烧结和半导化的温度范围.Ti/Sr比的作用还与施主杂质的添加量以及烧结条件有很大关系.在良好的烧结条件下,SrO过量(Ti/Sr<1.00)有利于晶粒生长和获得高的有效介电常数.但SrO和TiO_2这些杂质相的存在降低了晶界绝缘层的绝缘性,增加了介电损耗.
The effect of Ti / Sr ratio on SrTiO_3 GBBL capacitors single-fired at low temperatures has been studied in this paper. The results show that when varying in a certain range, Ti/ Sr ratio cannot affect the temperature range of sintering and grain semiconducting. The action of Ti / Sr ratio is closely related to the donor doping amount and sintering condition. The excess of SrO (Ti/Sr<1.00) is favorable for grain growth and getting higher effective dielectric constant under favorable sintering condition. The existance of SrO and TiO_2 decreases the insulating properties of grain boundaries, which increases dielectric loss.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
1991年第5期22-26,共5页
Bulletin of the Chinese Ceramic Society
