摘要
分别沿a、b、c轴三种取向,用提拉法生长了Mg_2SiO_4:Cr^(3+)晶体;用X射线和光学方法测定了各个显露面,确定其密勒指数。利用修改的Hartman理论,计算了几个重要显露面的吸附能。根据吸附能大小判断了显露面的顺序,理论结果与实验结果相符。
Mg_2SiO_4:Cr^(3+) crystals have been grown along the a, b and c-axis respectively by Czochralski technique. The orientations of all developing facets in the crystals and their Miller indices have been determined by means of X-ray and optical method. The relation between morphology of Mg_2SiO_4:Cr^(3+) crystal and it's structure is explained with the modified Hartman's theory.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1991年第4期324-330,共7页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金
关键词
硅酸镁
铬
晶体
吸附能
显露面
bond distance
bond energy
attachment energy
developing facet