Mg_SiO_4:Cr^(3+)晶体的生长习性

GROWTH HABITS OF Mg_2SiO_4:Cr^(3+) CRYSTAL

分别沿a、b、c轴三种取向,用提拉法生长了Mg_2SiO_4:Cr^(3+)晶体;用X射线和光学方法测定了各个显露面,确定其密勒指数。利用修改的Hartman理论,计算了几个重要显露面的吸附能。根据吸附能大小判断了显露面的顺序,理论结果与实验结果相符。

Mg_2SiO_4:Cr^(3+) crystals have been grown along the a, b and c-axis respectively by Czochralski technique. The orientations of all developing facets in the crystals and their Miller indices have been determined by means of X-ray and optical method. The relation between morphology of Mg_2SiO_4:Cr^(3+) crystal and it's structure is explained with the modified Hartman's theory.