摘要
在集成电路封装过程中,表面氧化是制约铜框架大批量应用于生产的主要原因,而框架表面氧化程度的测量和管控是铜框架应用于封装的关键点。本文运用金属氧化理论阐述了铜框架表面氧化过程及机理;进行铜框架烘烤氧化实验后测量框架表面的氧化膜厚度,通过对测量数据拟合得到铜框架氧化膜生长曲线,从而可以预测铜框架在封装过程中的氧化程度,为集成电路封装工艺的设计和管控提供依据。
In IC package technique, copper leadframe is extremely prone to oxidation in package process, which has considerably restrained its application. So the measurement and control of oxidation film is a key point for copper leadframe. The paper expounds process and mechanism of copper oxidation on the theory of metal oxide, and the film thickness on leadframe surface after curing is m6asured. Based on the data, growth curve of oxidation film was obtained by fitting experimental data. It can help to predict the degree of oxidation of copper leadframe in IC package process, and provide the theoretical basis for assembly design and process control.
出处
《中国集成电路》
2014年第4期55-58,76,共5页
China lntegrated Circuit
关键词
铜框架
表面氧化
氧化膜厚度
copper leadframe
Surface oxidation
Film thickness
