透明氧化物半导体及其溶液法制备薄膜晶体管

Transparent Oxide Semiconductor and Its Solution Processes for Thin Film Transistor

透明氧化物电子材料是当今最重要的电子材料之一,其本质是一类具有高迁移率的宽带隙半导体。通过调节其组分和结构,可以大范围调节其载流子浓度,从而使其表现为半导体或者导体性质。因此,透明氧化物电子材料可用于多种器件,特别是作为半导体沟道和透明导电电极。透明导电氧化物更早成为了研究热点,并已在商业化应用中广泛使用,透明氧化物作为新一代半导体也被广泛研究,现在透明氧化物半导体薄膜晶体管已经可以实用化。在较低的温度和大气环境中,通过溶液法制备的透明氧化物,表现出了较好的电子特性,因此成为了印刷电子中重要的领域。简要地介绍了透明导电氧化物和透明氧化物半导体晶体管的发展历程,并概述了溶液法制备透明氧化物晶体管方面所做的研究及取得的最新进展。并指出,现今采用的溶液法制备工艺所存在的问题,特别是工艺温度偏高,应进一步深入研究,使在低温工艺下制备高性能透明氧化物晶体管工艺走向成熟,才能进入工业化生产。

Transparent oxide is one of the most important transparent electronic materials. The nature of transparent ox- ide materials is a type of semiconductor with wide band gap and high charge mobility. Their charge carrier concentrations can be adjusted in wide range by controlling the composition and structure of oxide, making them as either semiconductors or conductors. Transparent conductive oxides in particular have been extensively studied for many years and been widely applied in commercial products. The low temperature processed transparent oxide semiconductor （TOS） appeared in high performance thin film transistors ten years ago, since then TOSs have gained extensive attention as the new generation sem- iconductor. Owing to considerable advances in the last few years, thin film transistors based on transparent oxide semicon- ductors are approaching the commercial market. Particularly, the solution processed transparent oxide is among the most promising printable semiconductor materials due to its good electronic performance, low processed temperature and high stability in ambient atmosphere. In this paper, transparent conducting oxide including three basic oxide compounds was briefly reviewed. Then, the development history of transparent oxide semiconductor was introduced. Emphasis was placed on the latest research on solution-processed TOSs for printable thin-film transistors （TFT） , which have demonstrated mob- ility up to 10 cm2V-ls 1 and on/off ratio more than 106 even when processed temperature as low as 200℃.