摘要
分析了InGaAs/InP pin光电探测器暗电流和响应度的影响因素,并对MOCVD外延工艺以及器件结构进行优化,从而提高器件响应度和降低暗电流。采用低压金属有机化学气相沉积设备(LP-MOCVD)成功制备了InGaAs/InP pin光电探测器,得到了高质量的晶体材料,InGaAs吸收层的背景浓度低于4×1014 cm-3。利用扩Zn工艺制作出感光区直径为70μm的平面光电探测器。测量结果显示,在反偏电压为5 V时,暗电流小于0.05 nA,电容约为0.4 pF。此外,在1 310 nm激光的辐照下,器件的响应度可达0.96 A/W以上。
In order to improve the responsivity and reduce the dark current for the InGaAs/InP pin photodetector, the MOCVD epitaxy process and the structure of the device were optimized on the basis of analyzing the effecting factors on the dark current and responsivity of the InGaAs/InP pin photodetector. The InGaAs/InP pin photodetector was successfully fabricated by the low- pressure metalorganic chemical vapor deposition （LP-MOCVD） equipment. The crystal material with good quality was achieved, and the background concentration of InGaAs absorption layer was less than 4 × 10^14 cm^-3. The Zn diffusion method was used to fabricate the planar photodetec- tor with the photosensitive area of 70μm diameter. The test results show that the dark current is less than 0. 05 nA, and the capacitance is about 0.4 pF when the reverse bias is 5 V. Besides that the responsivity of the photodetector is over 0.96 A/W under the laser irration of 1 310 nm.
出处
《微纳电子技术》
CAS
北大核心
2014年第4期214-218,248,共6页
Micronanoelectronic Technology
