一种SOI高温压力传感器敏感芯片

An SOI High-Temperature Pressure Sensitive Sensor Chip

从传感器的受力结构、能量转化结构和金属引线三个方面对SOI压阻式压力传感器芯片进行高温设计,计算出每个因素所造成的影响并与外部气压对传感器造成的影响进行对比,并给出了压阻的工艺尺寸和掺杂浓度。通过工艺制备和封装,研制出耐高温压力传感器芯片,常温压力测试结果表明传感器敏感芯片在常温下灵敏度较高,非线性误差在0.1%以下,迟滞性小于0.5%。高温下的性能测试结果表明,传感器可以用于350℃恶劣环境条件下的压力测量,为压阻式高温压力芯片的研制提供了参考。

A high temperature SOI pieoresistive pressure sensor chip was designed from the as- pects of the forced structure, energy conversion structure and metal lead. The effects of each fac- tor on the performance of the sensor were calculated, and compared with the influence of the ex- ternal pressure. The process size and doping concentration of the piezoresistance were listed. The high temperature pressure sensor chip was developed through the preparation and,packaging process. The normal temperature pressure test shows that the sensor is of relatively high sensi- tivity at room temperature, the nonlinearity error is below 0.1%, and the hysteresis is less than 0.5 %. The high temperature performance test results indicate that the sensor can maintain good performances and he used for the pressure test in the severe environment at high temperature of 350 ℃. This research provides a reference for the design of the piezoresistive high temperature pressure chip.