摘要
采用溶胶-凝胶法结合旋涂技术制备了Cu2ZnSnS4(CZTS)薄膜前驱体。将一部分前驱体在S气氛中于500℃硫化1 h,另一部分先在250℃预退火0.5 h后再在500℃硫化1 h。利用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计等对所制CZTS薄膜的微观结构、表面形貌以及光学性能等进行了表征,研究了预退火对CZTS薄膜性能的影响。结果表明:经预退火制备的薄膜比未经预退火制备的薄膜更为纯净,表面更加致密,其禁带宽度(1.49 eV)更接近CZTS薄膜太阳能电池的最佳禁带宽度(1.50 eV)。
Precursors of Cu2ZnSnS4 thin films were prepared by sol-gel method combining with spin-coating technique One part of the precursors was sulfurized at 500 ℃ for I h under S atmosphere, and the other part was first annealed at 250 ℃ for 0.5 h and then sulfurized at 500 ℃ for 1 h. The microstructures, surface morphologies and optical properities of the prepared CZTS films were investigated by X-ray diffraction, scanning election microscopy and UV-Vis spectrophotometer. The effects of pre-annealing on the properties of CZTS thin films was investigated. The results show that compared with the film obtained without pre-annealing, the CZTS film obtained through pre-annealing possesses purer phase and denser surface, meanwhile it＇s band gap （1.49 eV） is closer to the best band gap （1.50 eV） of CZTS thin film solar cells.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第5期21-23,共3页
Electronic Components And Materials
基金
吉林师范大学研究生科研创新计划资助项目(No.2013005)
