InAs/GaAs/InP及InAs/InP自组装量子点室温PL谱的研究

Analysis of Room Temperature PL Spectra of InAs/GaAs/InP and InAs/InP Self assembled QDs: A Five band Study

用五带 k· p模型计算 In As/ Ga As/ In P及 In As/ In P的室温 PL谱的能级分布 ,分析PL谱峰值 .发现 Ga As的张应变层影响 PL峰值位置 ,与 In As/ In P量子点相比 ,In As/Ga As/ In P量子点 PL谱峰值有明显红移 。

In this paper, the room temperature PL spectra of InAs self assembled dots grown on GaAs/InP and InP substrates are presented. For analyzing different positions of the PL peaks, we examined the strain tensor in these quantum dots using a valence force field model and used a five band k·p formalism to find the electronic spectra. We found that the GaAs tensile stained layer affects the position of the room temperature PL peak. The redshift of the PL peak of InAs/GaAs/InP QDs compared to that of InAs/InP QDs is explained theoretically.