摘要
采用PECVD法和磁控溅射法在 40Cr钢基片上分别沉积氮化硅薄膜和NiCr合金膜 ,用钠光平面干涉法测量双层薄膜的内应力 ,并具体分析该双层薄膜的内应力与薄膜厚度及系统之间的关系 .
The silicon nitride dielectric thin film and NiCr alloy thin film were prepared by PECVD and sputtering methods. The internal stress of the double-layer thin films were measured by using laser beam planar interference and the relationship between stress, thickness and the two-layer system were analysed.
出处
《福州大学学报(自然科学版)》
CAS
CSCD
2001年第1期20-21,19,共3页
Journal of Fuzhou University(Natural Science Edition)
基金
福建省自然科学基金!资助项目 (E9810 0 0 4)