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基体/介质/金属双层薄膜内应力的研究 被引量:1

A study on internal stress of dielectric and metal double-layer thin films
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摘要 采用PECVD法和磁控溅射法在 40Cr钢基片上分别沉积氮化硅薄膜和NiCr合金膜 ,用钠光平面干涉法测量双层薄膜的内应力 ,并具体分析该双层薄膜的内应力与薄膜厚度及系统之间的关系 . The silicon nitride dielectric thin film and NiCr alloy thin film were prepared by PECVD and sputtering methods. The internal stress of the double-layer thin films were measured by using laser beam planar interference and the relationship between stress, thickness and the two-layer system were analysed.
作者 于映 陈跃
出处 《福州大学学报(自然科学版)》 CAS CSCD 2001年第1期20-21,19,共3页 Journal of Fuzhou University(Natural Science Edition)
基金 福建省自然科学基金!资助项目 (E9810 0 0 4)
关键词 双层薄膜 内应力 钠光平面干涉法 氮化硅薄膜 镍-络合金膜 薄膜厚度 double-layer thin film internal stress laser beam planar interference
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参考文献4

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  • 3周志烽,薄膜科学与技术,1995年,8期,277页
  • 4金原粲,薄膜,1988年,130页

共引文献3

同被引文献13

  • 1楚振生,朱永福,袁剑锋,马凯,黄锡珉.淀积条件对GD_(a)-SiN_(x)薄膜电学特性的影响[J].液晶与显示,1997,12(1):21-25. 被引量:1
  • 2Rymuza Z,Misiak M,Schmidt-Szalowski, et al.Control tribological and mechanical properties of MEMS surfaces(Part 2:nanomechanical behavior of self-lubricating ultrathin films)[J].Microsystem Technologies,1999: 181-188.
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  • 8姜利军,赵润涛,陈翔,王旭洪,盛玫,徐立强.交替频率PECVD方法沉积低应力氮化硅薄膜及其性质研究[J].功能材料与器件学报,1999,5(2):121-126. 被引量:9
  • 9王玉林,郑雪帆,陈效建.低应力PECVD氮化硅薄膜工艺探讨[J].固体电子学研究与进展,1999,19(4):448-452. 被引量:14
  • 10李卫东,周晓荣,左正忠,周运鸿.电沉积复合镀层的研究现状[J].电镀与涂饰,2000,19(5):44-49. 被引量:35

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