期刊文献+

铝/镍/铜UBM厚度对SnAgCu焊点的力学性能及形貌影响 被引量:2

Effects of UBM Thickness on Shear Strength and Morphology in Solder Joints between SnAgCu Solder and Al/Ni/Cu Thin Films
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摘要 研究了倒装芯片中UBM制备和焊球回流工艺流程。通过改变阻挡层Ni和浸润层Cu的厚度,结合推拉力测试实验,探究了SnAgCu焊点剪切强度的变化规律。研究结果表明,UBM中阻挡层Ni对SnAgCu焊点的力学性能影响最大,而浸润层Cu厚度的增加也能提高SnAgCu焊点的力学性能。进一步对推拉力实验后的焊点形貌进行了SEM观察和EDS分析,得到了焊盘剥离、脆性断裂、焊球剥离、韧性断裂四种不同的焊点失效形式,代表着不同的回流质量,而回流质量主要由UBM的成分和厚度决定。研究结果为倒装焊工艺的优化提供了理论指导。 The flip chip processes of UBM fabrication and solder reflow were studied. By varying the thicknesses of Ni barrier layer and Cu wetting layer, the variation of the mechanical strength of the solder joints at the interface between SnAgCu solders and A1/Ni/Cu thin films was investigated. The results prove that the mechanical strength of the solder joints between SnAgCu solders and A1/Ni/Cu thin films is influenced mostly by the thickness of Ni barrier layer. And the mechanical strength can also be enhanced as the thickness of Cu wetting layer increases. After ball shear tests, the morphologies of the solder joints, observed by SEM and analyzed by EDS, were concluded as four modes of failure, that is, pad lift, brittle break, ball lift and ductile break. Each mode represents different reflow quality, mainly determined by the thickness and composition of UBM. The research results provide a theoretical guidance for the flip chip process optimization.
出处 《半导体光电》 CAS CSCD 北大核心 2014年第2期278-281,共4页 Semiconductor Optoelectronics
基金 国家"973"计划项目(2009CB724204)
关键词 倒装芯片 阻挡层 浸润层 推拉力 失效形式 flip chip barrier layer wetting layer ball shear failure mode
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参考文献13

  • 1Lu H Y, Balkan H, Simon K Y. Solid-liquid reactions: The effect of Cu content on Sn-Ag-Cu interconnects[J]. JOM, 2005, 57(6): 30-35.
  • 2Cheng M D,Chang S Y, Yen S F, et al. Intermetallic compounds formed during the reflow and aging of Sn- 3. SAg-0. 7Cu and Sn-201n-2Ag-0.5Cu solder ball grid array packages[J]. J. Electron. Mater., 2004, 33 (3) : 171-180.
  • 3郭江华,王水弟,张忠会,胡涛,贾松良.倒装芯片凸焊点的UBM[J].半导体技术,2001,26(6):60-64. 被引量:8
  • 4王来,何大鹏,于大全,赵杰,马海涛.倒装芯片中凸点与凸点下金属层反应的研究现状[J].材料导报,2005,19(9):16-19. 被引量:3
  • 5Li M, Zhang F, Chen W T, et al. Interracial microstructure evolution between eutectic SnAgCu solder and AI/Ni (V)/Cu thin films[J]. J. Mater. Res. , 2002, 17(7): 1612-1621.
  • 6KimJ, Jung S. Experimental and finite element analysis of the shear speed effects on the Sn-Ag and Sn-Ag-Cu BGA solder joints[J]. Mater. Science and Engin. : A, 2004, 371(1): 267-276.
  • 7娄浩焕,朱笑郓,瞿欣,Taekoo Lee,Hui Wang.无铅BGA封装可靠性的力学试验与分析[J].半导体技术,2005,30(3):36-40. 被引量:6
  • 8Kim J,Kim D, Jung S. Evaluation of displacement rate effect in shear test of Sn-3Ag-0. 5Cu solder bump for flip chip application[J]. Microelectron. Reliability, 2006, 46(2): 535-542.
  • 9AlamMO,ChanYC, TuKN. Effect of0.5wt% Cu addition in Sn-3.5% Ag solder on the dissolution rate of Cu metallization[J]. J. Appl. Phys., 2003, 94 (12) : 7904-7909.
  • 10段成龙,舒福璋,宋伟峰,关宏武.湿法刻蚀及其均匀性技术探讨[J].清洗世界,2012,28(11):33-36. 被引量:11

二级参考文献42

  • 1贾松良.功率半导体器件芯片背面多层金属层技术[J].半导体技术,1990,6(4):26-30. 被引量:3
  • 2Lu J C,Int’J Microcircuits Electromic Packaging,1998年,21卷,3期
  • 3Wu T Y,Proc of 46th ECTC,1996年,524页
  • 4Chen Wayne,IEEE Trans CPMT-C,1996年,19卷,4期,270页
  • 5Teo P S,IEEE/CPMT Electronic Components and Technology Conference,2000年
  • 6Wong C L,IEEE/CPMT Electronic Components and Technology Conference,1997年,244页
  • 7Jung E,IEEE/CPMT Int Electronics Manufacturing Technology Symposium,1996年,274页
  • 8Choi W K, Kang S K, Sohn Y C, Shih D Y. Study of IMC morphologies and phase characteristics affected by the reactions of Ni and Cu metallurgies with Pb-free solder joints. 53rd Electronic Components and Technology Conference 2003, New Orleans LA, United States, 2003.1 190 - 1 196.
  • 9Roubaud P, Bulwith R, Prasad S, Kamath S. Impact of intermetallic growth on the mectmnical strength of Pb-free BGA assemblies. San Diego,CA,USA:Presented at APEX 2001 ,Jan.2001, 16- 18.
  • 10Tu P L, Chan Y C, Lai J K L. Effect of intermetallic compounds on the thermal fatigue of surface mount solder joints. IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1997, Part B, 20( 1 ) : 87 - 93.

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