摘要
Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF （radio frequency） output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.
Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF （radio frequency） output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.
基金
Project supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences(Grant No.2A2011YYYJ-1123)
