摘要
N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction （XRD）, photoluminescence （PL）, optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.
N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction （XRD）, photoluminescence （PL）, optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.
基金
Project supported by the National Natural Science Foundation of China(Grant No.11304276)
the Natural Science Foundation of Guangdong Province of China(Grant No.S2013010014965)
the Cultivation of Innovative Talents of the Colleges and Universities of Guangdong Province of China(Grant No.LYM10098)
the China Postdoctoral Science Foundation(Grant No.20090461331)
the Natural Science Foundation of Zhanjiang Normal College,China(Grant No.ZL1005)
