高功率980nm非对称宽波导半导体激光器设计

Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers

设计了980 nm非对称宽波导InGaAs/InGaAsP量子阱激光器,并在结构中插入电流阻挡层,有效地阻止载流子的泄露。用LASTIP软件对980 nm非对称宽波导量子阱激光器进行理论模拟,与传统的980 nm对称宽波导量子阱激光器相比,非对称宽波导量子阱激光器波导和量子阱之间有更小的能带差,非对称宽波导结构具有更低的阈值电流,更高的斜效率以及更低的阻抗,所以带有电流阻挡层的980nm非对称宽波导InGaAs/InGaAsP量子阱激光器有更高的光电转换效率和输出功率。

The design of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer was designed for high-power, which prevents carrier leakage and increases electro-optical conversion efficiency. The properties of the 980 nm asymmetric waveguide quantum well structure lasers were numerically studied with a commercial LASTIP simulation program. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. The simulation results show that the asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure, so laser performance of asymmetric 980 nm InGaAs/InGaAsP broad-waveguide diode lasers with current blocking layer has higher electro-optical conversion efficiency and laser output power.