超薄Ni_(0.86)Pt_(0.14)金属硅化物薄膜特性

Study of Ultrathin Ni_0.(86)Pt_(0.14) Silicide Film

通过研究超薄Ni-0.86 Pt-0.14㈦。金属硅化物薄膜的特性，提出采用310℃／60S与480℃／10s两步快速热退火（RTA）的工艺方案，形成的Ni（Pt）硅化物薄膜电阻率最小，均匀性最好，且在600oC依然保持形态稳定。应用此退火条件，Ni-0.86 Pt-0.14在0．5μm和22nmCMOS结构片中形成覆盖均匀且性能良好的金属硅化物薄膜，同时没有形成任何尖峰。对于更薄的硅化物，实验结果表明，2nmNi-0.86 Pt-0.14形成的超薄硅化物界面平整，均匀性好，没有在界面出现Ni-0.95 Pt-0.05金属硅化物的“倒金字塔形”尖峰。结果显示，比较在有、无氩离子轰击的硅表面形成的两种Ni（Pt）Si硅化物薄膜，后者比前者电阻率约低10％～26％，该工艺有望在未来超薄硅化物制作被广泛应用。

The characteristics of uhrathin Ni-0.86 Pt-0.14 metal silicide film was investigated. The process of two-step rapid thermal annealing （RTA） at 300℃ for 60 s and at 480 ℃for 10 s was pro- posed, during the annealing treatments, the formed sheet resistance could have the minimum resistivity, preferable standard deviation and thickness uniformity. With the addition of Pt elements, Ni （Pt） Si/Si morphology is stable at the temperature rising to 600 ℃. The Ni-0.86 Pt-0.14silicide was demonstrated at 0.5 μm and 22 nm CMOS structure. It has a good interface and uniformity without forming spike. The optimal silicidation of 2 nm Ni-0.86 Pt-0.14 film has a smooth Ni （Pt） Si/Si interface and better uniformity, and the inverted-pyramid formed spike of the Ni-0.95 Pt-0.05 film metal silieide is not found at the interface. The re- suits show that the Ni （Pt） silieide film without Ar clean process has the reduction about 10%-26% in resistivity comparing with Ar clean process. The process is expected to be widely used in future uhrathin Ni （Pt） silicide fabrication.