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超薄Ni_(0.86)Pt_(0.14)金属硅化物薄膜特性 被引量:2

Study of Ultrathin Ni_0.(86)Pt_(0.14) Silicide Film
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摘要 通过研究超薄Ni-0.86 Pt-0.14㈦。金属硅化物薄膜的特性,提出采用310℃/60S与480℃/10s两步快速热退火(RTA)的工艺方案,形成的Ni(Pt)硅化物薄膜电阻率最小,均匀性最好,且在600oC依然保持形态稳定。应用此退火条件,Ni-0.86 Pt-0.14在0.5μm和22nmCMOS结构片中形成覆盖均匀且性能良好的金属硅化物薄膜,同时没有形成任何尖峰。对于更薄的硅化物,实验结果表明,2nmNi-0.86 Pt-0.14形成的超薄硅化物界面平整,均匀性好,没有在界面出现Ni-0.95 Pt-0.05金属硅化物的“倒金字塔形”尖峰。结果显示,比较在有、无氩离子轰击的硅表面形成的两种Ni(Pt)Si硅化物薄膜,后者比前者电阻率约低10%~26%,该工艺有望在未来超薄硅化物制作被广泛应用。 The characteristics of uhrathin Ni-0.86 Pt-0.14 metal silicide film was investigated. The process of two-step rapid thermal annealing (RTA) at 300℃ for 60 s and at 480 ℃for 10 s was pro- posed, during the annealing treatments, the formed sheet resistance could have the minimum resistivity, preferable standard deviation and thickness uniformity. With the addition of Pt elements, Ni (Pt) Si/Si morphology is stable at the temperature rising to 600 ℃. The Ni-0.86 Pt-0.14silicide was demonstrated at 0.5 μm and 22 nm CMOS structure. It has a good interface and uniformity without forming spike. The optimal silicidation of 2 nm Ni-0.86 Pt-0.14 film has a smooth Ni (Pt) Si/Si interface and better uniformity, and the inverted-pyramid formed spike of the Ni-0.95 Pt-0.05 film metal silieide is not found at the interface. The re- suits show that the Ni (Pt) silieide film without Ar clean process has the reduction about 10%-26% in resistivity comparing with Ar clean process. The process is expected to be widely used in future uhrathin Ni (Pt) silicide fabrication.
出处 《半导体技术》 CAS CSCD 北大核心 2014年第5期370-376,共7页 Semiconductor Technology
基金 国家科技重大专项资助项目(2009ZX02035-006)
关键词 硅化物 尖峰 界面 热稳定 快速热退火(RTA) silicide spike interface thermal stability rapid thermal annealing (RTA)
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  • 1LUVOIE C,HERRLE F M,DETAVERNIER C,et al.Towards implementation of a nickel silicide process for CMOS [J].Microelectronic Engineering,2003,70(2):144-157.
  • 2LEE P S,PEY K L,MANGELINCK D,et al.Phase and layer stability of Ni-and Ni(Pt)-silicides on narrow poly-Si lines [J].Journal of the Electrochemical Society,2002,149(6):G331-G335.
  • 3HONG Q Z,ZHU J G,CARTTER C B,et al.Thermal stability of PtSi contact to GexSi1-x [J].Applied Physics Letters,1991,58(9):905-907.
  • 4ZHANG S L,OSTLING M.Metal silicides in CMOS technology:past,present,and future T rends [J].Critical Reviews in Solid State and Materials Sciences,2003,28(1):1-129.
  • 5SETIAWAN Y,LEE P S,WANG X,et al.Laser-induced Ni(Pt)germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure [J].Applied Physics Letters,2007,90(7):073108-1-073108-3.
  • 6LUO J,QIU Z J,ZHA C J,et al.Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films [J].Applied Physics Letters,2010,96(3):031911-1-031911-3.
  • 7ADUSUMILLI P,SEIDMAN D,MURRAY C,et al.Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100)specimens [J].Applied Physics Letters,2012,112(6):064307-1-064307-11.
  • 8ZHANG Z,ZHANG S L,YANG B,et al.Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate [J].Applied Physics Let-ters,2010,96(7):071915-1-071915-3.
  • 9ZHANG Z,YANG B,ZHU Y,et al.Exploitation of a self-limiting process for reproducible formation of uhrathin Ni1-xPtx silicide films [J].Applied Physics Letters,97(25):252108-1-252108-3.
  • 10LI M Y,CHEN J M,LIU C C,et al.CESL-stressorinduced morphological instability of Pt-dissolved Ni germanosilicide formed on silicon germanium epilayer [J].IEEE electron device letters,2011,32(10):1725-1727.

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