摘要
采用交流阻抗和光电化学方法研究了氢对３１０不锈钢钝化膜半导体性质的影响.结果表明，氢对３１０不锈钢钝化膜的半导体类型没有影响，均是ｎ型.对未充氢的试样，随钝化电位的升高，钝化膜的施主浓度降低而平带电位则升高.氢能升高３１０不锈钢钝化膜的电容、施主浓度和平带电位、氢使３１０不锈钢钝化膜的光电流峰值升高、峰位后移，即氢降低钝化膜的光学禁带宽度，这和氢使钝化膜中Ｃｒ的化合物含量下降有关．
Type 310 stainless steel specimens were precharged with hydrogen at various current densities in 0.25 mol/L Na2SO4 solution. After hydrogen injection and film formation at different passive potentials, the AC of the passive film has been measured and the results show that the capacitance and adulterated concentration of the film are decreased, but the flat band potential is increased with the increment of passive potential. Hydrogen raises the capacitance, the flat potential and adulterated concentration of the film. Photoelectric test indicates that hydrogen changes the photo-electricity of film, advances the photocurrent and reduces optical band gap. The results are discussed in relation to semiconductor model and it is considered that hydrogen influences the electronic properties via changing the composition of passive film.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第1期67-71,共5页
Acta Metallurgica Sinica
基金
家自然科学基金!59771062
国家重点基础研究专项基金!G19990650
关键词
钝化膜
钝化电位
氢
不锈钢
半导体性质
passive film
passive potential
hydrogen
stainless steel
