摘要
设计了一款基于氧化钨的8Mb高密度阻变存储器,采用单晶体管开关、单电阻(1T1R)的存储器单元结构,设计了完整的存储单元、行列译码器、写驱动和灵敏放大器等关键模块。存储器芯片采用HHNEC 0.13μm 1P8M CMOS工艺流片。仿真结果表明,在8F2的高密度存储单元面积下,该存储器可实现准确的数据写入和读出功能。
An 8Mb high density resistive random access memory(RRAM)was designed based on WO3.The 1T1R(1transistor and 1resistive memory cell)RRAM contained memory cell,bitline and wordline decoder,write driver,and sense amplifier,etc.The RRAM was implemented in HHNEC 0.13μm 1P8M CMOS process. Simulation results showed that the RRAM with 8F2 high density memory cells could write and read information correctly at 1.8Vpower supply.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第2期241-244,共4页
Microelectronics
基金
国家高技术研究发展(863)计划资助项目(2011AA010403)
关键词
阻变存储器
写驱动
灵敏放大器
Resistive random access memory
Write driver
Sense amplifier