摘要
A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.
A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.
