摘要
研究了沟槽栅与平面栅结构1 200V/20A场截止(Field-stop)型(绝缘栅双极型晶体管)(IGBT)的短路耐量特性,从测试电路参数与器件本身的结构与工艺两方面对具有沟槽栅及平面栅结构的场截止型IGBT进行了探究,其中热耗散为引起击穿的主要原因。实际制作了沟槽栅-场截止型IGBT,采用优化的正面沟槽结构结合背面场截止薄片工艺,选择了合适的集电极-发射极间的饱和电流保证器件具有较低的导通压降的同时减少了焦耳热的产生,提升了芯片自身的抗短路能力(tsc>12μs),有利于沟槽栅IGBT应用的可靠性。
The short-circuit capability characteristics of 1 200 V/20 A field-stop IGBT with either trench gate or planar gate are discussed. By comparing the short-circuit capability of either trench gate or planer gate field-stop IGBT under different circuit parameters, it is found that the thermal dissipation is the main reason for the breakdown. A trench gate field-stop IGBT is de- signed by combination of optimized trench structure and backside field-stop layer, and an appro- priate collector-emitter saturation current is selected, which ensure a low positive conduction voltage drop and less Joule hart generation of the device, and enhance the short-circuit capability（t5c〉12μs）of IGBT chips. Those measures improve the reliability of trench gate IGBT applications.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第2期111-119,共9页
Research & Progress of SSE
基金
国家工信部新型电力电子器件研发及产业化资助项目(2010)
