忆阻-电容等效忆感器的有源回转实现及其特性仿真

Active Equivalent Meminductor of Contained Memristor-capacitance and Its Characteristic Simulation

忆阻器的出现给电子信息技术的进一步发展带来新的契机。忆感器作为新型模拟记忆器件的另一种类型,其实体器件尚待研发。基于模拟记忆器件特性的分析,利用电压模和电流模电路分别进行电抗性质的变换,实现对电容和忆阻回转的忆感器有源等效。MATLAB的系统级仿真结果表明:等效忆感器具有电流-磁通量之间的自收缩滞回特性,这与理论概念上的忆感特性相吻合,为忆感器在电子学中产生新功能的实验研究提供了功能模拟实体。

With the emergence of memristor, a new opportunity has been brought for further development of electronic information technology. As another type of new analog memory de- vice, the real device of meminductor needs yet to be developed. Based on characteristic analysis of analog memory device, the reactance nature was transformed by the voltage mode and current mode circuit respectively, and the active equivalent meminductor was achieved by using the ca- pacitance and the memristor. The system-level MATLAB simulation results show that the equiv- alent meminductor has the self-contraction hysteresis characteristic between current and flux, which is consistent with the theoretical properties of meminductor and would provide a simulation entity for studying the new functions of the meminductor in electronics.