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2.14GHz GaN-HEMT脉冲功率放大器设计(英文)

Design of 2.14GHz GaN-HEMT Pulse Power Amplifier
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摘要 设计了一款用于无线通信W-CDMA,工作在2.04~2.24GHz的脉冲功率放大器。采用微波仿真软件ADS对放大器的输入/输出阻抗匹配电路、偏置电路及其整体功放电路进行了仿真和优化。测试结果表明,在2.14GHz处的三阶交调值为32.14dBc,小信号增益为18dB,饱和输出功率为44dBm,功率附加效率达到55%。在2.04~2.14GHz频率范围的增益平坦度小于1dB。测试结果和仿真结果相近。 In this paper, a GaN HEMT pulse power amplifier over the 2.04~2.24 GHz operating range has been presented for wireless communication W-CDMA. Input and output impedance matching networks, bias circuit and whole circuit of the power amplifier are simulated and optimized with microwave simulation software ADS. The measurement results witness that the proposed power amplifier achieves a three order intermodulation of 32.14 dBc, a small signal gain of 18 dB and a power-added efficiency of 55% at an output power of 44 dBm at 2.14 GHz. The gain flatness is less than ldB from 2.04 to 2.24 GHz. The measurement results are in close agreement with simulation results.
作者 姚银华
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2014年第2期129-135,191,共8页 Research & Progress of SSE
关键词 功率放大器 氮化镓 S参数 微波测试 power amplifier gallium nitride S-parameter microwave measurement
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