快闪存储器阈值电压分布读取和修正方法

Threshold Voltage Reading and Correcting Method for Flash Memory

在快闪存储器中,多晶硅浮栅的漏电、存储单元之间的干扰、长期的编程擦除操作都会使存储单元的阈值电压发生漂移,使采用多电平技术的快闪存储器的阈值电压分布规划变得越来越困难。针对这一问题,提出了一种快闪存储器阈值电压分布读取方法,该方法能准确地测量快闪存储器的阈值电压分布,给快闪存储器阈值电压分布规划和编程擦除算法的设计提供参考。

In flash memory, the leakage from the floating gate, crosstalk among memory cells and long erase/program operation will make the memory cell＇s threshold voltage drift. As a result, planning threshold voltage distribution for multi-level cell is becoming more and more difficult. To solve this problem, a reading and correcting method for flash memory threshold voltage distribution is presented in this paper. This method can accurately measure threshold voltage distribution of flash memory, which is valuable for the plan of programming and erasing algo- rithm in multi-level cell.