MBE生长GaN纳米柱XRD和AFM分析

XRD and AFM Investigation of GaN Nanocolumns Grown by MBE

首次使用纳米压印和分子束外延(MBE)相结合的方法在图形化衬底上成功制备出GaN纳米柱,并用XRD和AFM对其形貌和结构特性进行了分析表征。XRD分析表明所制备的GaN纳米柱在(0002)方向择优生长。计算得出GaN纳米柱的尺寸约为30 nm。原子力显微镜AFM分析发现:随着V/III的增大,表面粗糙度逐渐降低。基于XRD和AFM分析结果,讨论了V/III比对制备GaN纳米柱形貌和结构的影响。

The morphological and structural properties of GaN nanocolumns grown on patterned sub- strate by nano-imprint and molecular beam epitaxy （MBE） technology have been investigated using a- tomic force microscopy （AFM） and X-ray diffraction （XRD）. The XRD crystallographic investigation of the GaN nanocolumns reveals a strongly preferred [ 0002 ] growth direction; the size calculated through XRD results of GaN nanocolumns is about 30 nm. AFM shows that the surface roughness de- creases when the V/III radio increases gradually. The influence of the experimental V/III radio pa- rameters on the morphology of the nanocolumns and on the preferred orientation of the sample is dis- cussed in view of the XRD and AFM results.