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低噪声放大器高线性度偏置的数学证明 被引量:1

Mathematical Proof of Low Noise Amplifier High Linearity Bias Circuit
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摘要 通信技术日新月异,通信产品的更新换代越来越快,性能越来越优,客服体验要求越来越高,无疑对通信芯片的设计提出了更高的要求和挑战。通信芯片的核心在于接收机,而接收机的关键在于低噪声放大器。低噪声放大器的核心指标是噪声、增益和线性度。低噪声放大器线性度对整个系统的线性度起着重要作用,它的非线性越小越好。低噪声放大器的线性度受偏置电路的直流阻抗影响较大。文中对一种工作在S波段,能极好地提高低噪声放大器线性度的偏置电路给出了数学证明。 Advances in communications technology, communication products renewal faster and faster, more and more optimal per- formance and the experience of the service demand is higher and higher. This put forward higher requirements and challeng for the com- munication chip design. . The core index of the low noise amplifier is noise, gain and linearity. The linearity of low noise amplifier plays an important role in the the linearity of whole system, its nonlinear as small as possible. Low noise amplifier' s linearity is great- ly influenced by de bias circuit impedance. This paper gave mathematical proof of a kind of bias circuit, which work in S band, and can improve the low noise amplifier linearity very good.
出处 《实验科学与技术》 2014年第2期10-11,49,共3页 Experiment Science and Technology
关键词 高线性度 低噪声放大器 数学证明 偏置 ohigh-linearity low noise amplifier mathematical proof bias
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参考文献8

  • 1路志义,谢红云,霍文娟,张万荣.0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA[J].Journal of Semiconductors,2013,34(2):67-71. 被引量:1
  • 2Wang R L,Chen S C,Huang C L.Single/multiband COMS low-noise amplifier using concentric switching inductors[J].Mierow OPt Technol Lett,2012,54(2):309.
  • 3Niehenke Edward C.The evolution of low noise devices and amplifiers[C]//.Microwave Symposium Digest (MTT),2012 IEEE MTT-S International.[S.1.]:IEEE Press,2012:1-3.
  • 4张万荣,邱建军,金冬月,张静,张正元,刘道广,王健安,徐学良,陈光炳.SiGe/Si HBT高频噪声特性研究[J].微电子学,2006,36(1):27-29. 被引量:4
  • 5Ko J S,Kim H S,Ko B K,et al.Effect of bias scheme on intermodulation distortion and its use for the design of PCS TX driver[C]//.IEEE RFIC Symp.Dig.,2000.[S.1.]:IEEE Press,2000:105-108.
  • 6Taniguchi,Eiji,TAKAYUKI Ikushima,et al.A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier[J].Microwave Theory and Techniques,2003,51(2):414-421.
  • 7Leitner T.A high linearity LNA with modified resistor biasing[C]//.Asia-pacific Microwave Conference 2009.singapore:APMC 2009,2009:1160-1163.
  • 8华成英,童诗白.模拟电子技术基础[M].4版.北京:高等教育出版社,2006.

二级参考文献4

  • 1Greenberg D R,Sweeney S,Jagannathan B,et al.Noise performance scaling in high-speed silicon RF technologies[A].Topic Meet on Si Monolith Integr Circ in RF Syst[C].Bavaria,Germany.2003.22-25.
  • 2Niu G,Ansley W E,Zhang S,et al.Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications[J].IEEE Trans Elec Dev,1999,46(8):1589-1598.
  • 3Regis M,Borgarino M,Bary L,et al.Noise behavior in SiGe devices[J].Sol Sta Elec,2001,45(11):1891-1897.
  • 4张倩倩,刘章发.适用于GSM900/GPS系统的双频段低噪声放大器设计[J].微电子学,2011,41(6):824-829. 被引量:2

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