X射线衍射、X射线光电子能谱对PtSi薄膜形成机理的研究

Study on the formation mechanism of PtSi film by X-ray diffraction and X-ray photo spectrum

促使物相尽可能地向Pt2 Si和PtSi转化 ,是PtSi薄膜工艺研究中的重要工作。文中通过用X射线衍射 (XRD)、X射线光电子能谱 (XPS)微观分析手段对PtSi薄膜形成物相分步观察 ,研究了长时间变温退火、真空退火以及真空和保护气体 (N2 和H2 )退火等工艺条件对溅射PtSi薄膜物相形成的影响。结果表明 ,氢气气氛退火能提高薄膜质量 ;

It is very important for formation of PtSi thin film to make the phases of thin film change into Pt\-2Si and PtSi. The formation process of phases is observed by X\|ray diffraction (XRD) and X\|ray photo spectrum (XPS), and the effects on the formation mechanism of phases of sputtering PtSi thin film are discussed, which annealed in different conditions, i.e. long time non isothermal annealing, vacuum annealing and vacuum annealing under protecting gas(H\-2 and N\-2). The research results show that annealed in protecting gas of H\-2 can improve quality of PtSi thin film evidently, and vacuum annealing may decrease the effect of oxygen on formation phases of PtSi thin film.