摘要
提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。
A novel structural thin film SOI LIGBT——drift region thinned multi channel thin film SOI LIGBT(DRT MC TFSOI LIGB)——is presented.Its temperature characteristics of off state leakage current between 423～573 K at low voltage are investigated.It is indicated that excellent characteristics of off state leakage current at high temperatures and very high off state breakdown voltage and sufficiently large forward current and low forward voltage drop may be obtained by reasonable designs.It is also indicated that it can be applied not only to high temperature and low voltage applications but also to high temperature and high voltage applications.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2001年第1期37-42,共6页
Research & Progress of SSE
基金
国家自然科学基金!重点项目 (批准号 :6 9736 0 2 0 )
