摘要
采用有效质量理论 6带模型 ,计算了 In0 .53Ga0 .4 7As/ In P量子线的光学性质 ,具体计算了In0 .53Ga0 .4 7As/ In P量子线的能带结构、态密度、载流子浓度、光学跃迁矩阵元和光学增益谱 ,并把量子线的光学增益谱和量子阱的光学增益谱作了比较。
In the framework of 6 band effective-mass theory, the optical gain of In0.53 Ga0.47 As/InP quantum wire are studied. The valence subband structure, density of states, carrier density, optical transition matrix elements, and optical gain are calculated. The results of optical gain for quantum wire are compared with those for quantum well.
出处
《固体电子学研究与进展》
EI
CAS
CSCD
北大核心
2001年第1期50-56,共7页
Research & Progress of SSE
基金
福建省自然科学基金!资助课题 (No.E9910 0 0 5 )
关键词
有效质量理论
量子线
光学增益
子带结构
Calculations
Carrier concentration
Gain measurement
Semiconductor device structures
Semiconductor quantum wells
