摘要
研究了半导体材料少子产生寿命的计算机辅助测量 ,设计了相应的产生寿命 C- t瞬态测量系统 ,能实现从阶跃信号产生直到测量结果输出全过程的自动化 ,提高了测量速度和准确度。应用于传统的“Zerbst图”法 ,可在原理和数据处理两方面得到较大的改善。
The computer aided measurement of generation lifetime has been studied, and a corresponding capacitance time ( C t ) transient measurement system has been designed. The system realizes the automation from the pulse signal generation to the output of results, and hence the velocity and accuracy of measurement have been greatly improved. Applied to the traditional “Zerbst plot” method, both the principal and the data process can be ameliorated.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2001年第1期87-91,共5页
Research & Progress of SSE
关键词
少子产生寿命
计算机辅助测量
半导体材料
semiconductor
minority carrier generation lifetime
computer aided measurement