摘要
讨论了LTCC基板薄膜金属化技术中 ,有效阻碍层的选择对基板共晶焊的影响 ,实验结果表明 ,Ti/Ni是一种高可靠性的阻碍层 。
The choose of effective barrier metals during metalizing the low temperature co-fired ceramic(LTCC) substrates in thin-film is described.By experiments the Ti/Ni is a high reliable barrier metals and also Ti/Ni/Au is an ideal thin-film metalized structure for LTCC substrates.
出处
《电子工艺技术》
2001年第2期71-73,共3页
Electronics Process Technology
关键词
LTCC基板
薄膜金属化
共晶焊
阻碍层
剪切强度
LTCC substrate
Thin-film metalized
Eutectic solder bumps
Barrier metal
Shear strength
