摘要
利用脉冲激光沉积技术制备了p-n型的La0.67Sr0.33MnO3/GaN异质结.在室温下测量了La0.67Sr0.33MnO3/GaN异质结的电流-电压特性曲线,结果表明该异质结具有较好的整流效应.对该异质结的光电效应进行了测量,发现该异质结还具有明显的光电效应:当用光功率为6mW、波长520nm的光照射该异质结时该异质结的光电压可达33μV.还发现异质结的光电压与入射光的功率及光子能量有依赖关系:入射光功率或光子能量越大,光电压越高.根据La0.67Sr0.33MnO3/GaN的能带结构对实验结果作了解释.结果表明La0.67Sr0.33MnO3/GaN异质结可用作光电器件.
A p-n junction composed La_0.67S_r0.33Mn03 and GaN was fabricated by pulsed laser ablation. This La_0.67S_r0.33Mn03 /GaN heterojunction showed good rectifying properties at room temperature. Photovoltaie effect of the heterojunction was also investigated. It was found that when La_0.67S_r0.33Mn03/GaN heterojunction was exposed to light at 480 nm and power 1 mW, photovoltage reached a maximum of 71μV. Further study showed that photovohage of junction increased with decreasing （increasing） wavelength （power） of incident light. This was explained by the band structure of the heterojunction. Our data demonstrated that La_0.67S_r0.33Mn03/GaN heterojunction could be used as an optoelectronic device.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第2期129-131,共3页
Journal of Beijing Normal University(Natural Science)
基金
教育部高等学校博士学科点专项科研基金新教师基金资助项目(200800271059)
北京师范大学本科生科研基金资助项目
北京师范大学国创基金资助项目
关键词
锰氧化物
GAN
异质结
整流效应
光电效应
manganite
GaN
heterojunction
rectifying effect
photovoltaic effect
