高密度、直立Co-Cu合金纳米线有序阵列的制备

Preparation of High-density and Standing Co-Cu Alloy Nanowire Arrays

利用一种简化的阳极氧化法制备出高度有序的氧化铝模板.利用电化学沉积法采用恒压直流电沉积模式在氧化铝模板的孔洞中制备了CoCu合金纳米线阵列.用SEM、TEM、EDS、XRD对样品进行了形貌、成分和微结构测试,结果显示,成功制备了大面积有序的CoCu合金纳米线阵列,纳米线尺寸均匀,直径约为70 nm,长度约为30～ 40 μm,其长径比为400～600,纳米线的晶粒生长过程中晶面具有一定的择优取向性.

Well-ordered anodic aluminum oxide （AAO） templates are prepared by a simplified method.Co-Cu alloy nanowire arrays are fabricated in the prepared AAO templates by constant voltage DC electrodepositing.SEM,TEM,EDS,and XRD are used to characterize the morphology,composition,and micro-structure of these samples.The results show that large area Cu-Co alloy nanowire arrays are achieved.The nanowire＇ s diameter and length are about 70 nm and 30-40 μm,respecticely,and the aspect ratio of the nanowire is 400-600.The result also indicates that the nanowires have a preferred crystal face during growing.