摘要
超高真空测试设备配备的能量分析仪可分析材料表面发射的二次电子能谱,区分真正的二次电子和背散射电子,并通过对能谱积分求得真二次电子系数。本文以纯净银箔材料为例,将电流法测试的二次电子系数(SEY)与能谱分析结果进行对比,误差不超过6%,验证了电流法测试的正确性,并且分析了误差产生的原因。
Secondary Electron(SE) spectrum can be measured by energy analyzer which is equipped on a newly-installed Ultra High Vaccum(UHV) measurement facility. True-secondary electrons and backscattered electrons can be distinguished from emitted electrons, and true-secondary electron yield can be measured by integral of SE spectrum. In this paper, an experiment was carried out on pure silver material to compare Secondary Electron Yield(SEY) by different methods(electrical current measurements and SE spectrum analysis). The comparison result shows that the error of the two methods is less than 6%, which validates the electrical current method. The cause of error is also been discussed.
出处
《太赫兹科学与电子信息学报》
2014年第1期141-144,共4页
Journal of Terahertz Science and Electronic Information Technology
基金
重点实验室基金资助项目(9140C530103110C5301)
关键词
二次电子
二次电子发射
背散射电子
能谱
Secondary Electron
secondary electron emission
backscattered electron
energy spectrum