ALSI或ALSICU刻蚀后硅渣残留去除方式的研究

Stduy on removal method of Si residue caused by ALSI or ALSICU etch in semiconductor manufacturing

半导体器件制造中会用到ALSI或ALSICU做金属连线,ALSI或ALSICU里一般含有0.5%～1%的Si,目的是防止ALSI互融造成PN junction spiking,但引入Si、金属连线刻蚀后会有硅渣析出,刻开区分布不规则的小黑点,影响表观.比较和分析了目前半导体制造行业几种去硅渣方式的机理和优缺点,同时提出一种新的高效的干法去硅渣方式.在上述分析的基础上,标准化了去硅渣工艺,提出的去硅渣标准流程,对半导体制造具有广泛的指导作用.

ALSI or ALSICU may be used as metal connecting line in semiconductor manufacturing. About 0.5%～1% Si isput in ALSI or ALSICU to prevent ALSI penetration into P-N junction to produce junction spiking. In order to remove the Si resi-dues on wafer’s surface,the mechanisms and relative merits of Si residues removal methods used in semiconductor manufac-turing industry at present are compared and analyzed,and a new Si residue dry removal method is proposed in this paper. Thestandardized Si residue removal process was laid down. The standard procedure presented in this paper for removing the Si resi-due has an extensive guiding function in semiconductor manufacturing industry.