紫外光下Ag掺杂TiO_2薄膜基底对VO_2相转变温度的影响

Effect of Ag Doping TiO_2 on the Phase Transition Temperature Point of VO_2 under Ultraviolet Light Irradiation

利用溶胶-凝胶法和浸渍提拉技术制备了不同结构银掺杂二氧化钛薄膜为基底材料的VO2薄膜,考察了Ag分级配置的二氧化钛薄膜基底材料对VO2薄膜相变温度的影响。在紫外灯照射下测试面内电阻随温度,电压随时间的变化,结果表明基底材料为Ag分级配置的VO2/TiO2薄膜相变温度点明显降低。这可能是由于光照条件下空穴载流子从基底材料注入到VO2薄膜导致相变温度点偏移。因此,不同结构银掺杂二氧化钛薄膜为基底材料的VO2薄膜能够根据环境温度和太阳光线变化而应用于光热致变色智能窗。

The transition metal oxide （TMO） film, VO2, was fabricated on Ag doping titanium oxide substrates by sol-gel method. By the measurement of in-plane resistance varied with temperature under ultraviolet light irradiation, an obvious decrease in the phase transition temperature point was observed for VO2/TiO2 with a silver hierarchical configuration. The reason why the phase transition temperature point shift was discussed base on the voltage measurement under light irradiation that indicated hole-carrier injection from the substrate to the VO2 film. The TMO film could be applied as a photo-thermochromic smart window to enable automatic solar/heat control in response to environmental temperature and solar light.