摘要
GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.
GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.
基金
Supported by the National Basic Research Program of China under Grant Nos 2013CB932904, 2012CB932701, 2011CB922201 and 2010CB327600, the National Special Funds for the Development of Major Research Equipment and Instruments under Grant No 2012YQ140005, and the National Natural Science Foundation of China under Grant Nos 61274013, U1037602 and 61290303.
