低压大功率平面稳压二极管的设计与制造

Design and manufacture of low-voltage high-power plane zener diode

随着电力、电子、国防事业的不断发展,对10 V以下大功率稳压二极管的需求量越来越大。文章论述了低压大功率平面二极管的设计原理,并对目前市场需求量较大的(5±5%)V、(6.8±5%)V、(8.2±5%)V等典型电压范围的产品进行设计及制造探讨。通过仿真和实践论证了在一定衬底电阻率下,反向击穿电压、正向压降之间的关系,提出了该类产品的设计原理。并对该类产品在测试时出现的一些问题进行分析,找到相应的解决方法,为今后同类产品的设计与制造提供参考。

With the development of electricity, electronics and national defense business,the demand for the high-power I0 V zener diodes is growing.This paper discusses the design principles of low-voltage high-power planar diode, and the design and manufacturing of typical voltage range in great demand ,such as （5 ± 5% ） V, （6.8 ± 5% ） V, （8.2 ± 5% ） V.Through simulation and practice ,demon- strates the ralationship between reverse breakdown voltage and forward voltage drop under certain substrate resistivity,proposes design principles of such products.At the same time, corresponding countermeasures to some problems arising in the test are put forward, to provide a reference for the future desian and manufacture of similar products.