SOI/SIMOX-CMOS器件的研究

Fabrication of SIMOS/SOI CMOS IC’s

研究SOI SIMOX(SiliconOnInsulation SeparationbyImplantedOxygen)材料及SIMOX CMOS器件 .高能大剂量 ( 1 70keV ,1 .5× 1 0 18 cm2 )氧离子注入到P型( 1 0 0 )单晶Si衬底 ,再经高温长时间 ( 1 30 0℃ ,6h)退火 ,形成SIMOX结构材料 .经测试 ,SIMOX表层单晶硅膜反型为N型 ,研究表明 ,这是由于在制备SIMOX的工艺中 ,残留在SIMOX表层硅膜内的氧离子起施主作用所致 ,并计算出氧杂质在硅中的施主电离能 ,其值为 0 .1 5eV .采用SIMOX材料研制了MOSFET及CMOS三 3输入端与非门电路 ,并介绍了研制SIMOX CMOS器件的主要工艺 .

SOI SIMOX(Silicon On Insulator Separation by Implanted Oxygen) materials were formed by large dose(1.5×10 18 /cm 2) oxygen ion implantation into p type (100) Si wafers at energy of 170?keV and annealing in nitrogen at 1300℃ for 6?h.The carriers in the top silicon layers of the SIMOX are reversed from P type into N type.The reversion is resulted from the residual oxygen atoms in the top Si layers,which play the role of donors and over compensate the acceptors in the virgin p type Si.The oxygen donor ionization energy is 0.15?eV.The MOSFETs and CMOS triple 3 input NAND gate circuits(CC4023) were fabricated on SIMOS/SOI materials.The CMOS/SIMOX process is briefly introduced.