小靶材实现大平面基片均匀性膜层沉积的方法

Depositon method of uniform film on large substrate by lesser target

常规的实验用磁控溅射设备,其固定的靶基工况,导致膜层均匀性区域有限,只能用于较小基片上膜层的沉积。提出一种新的方法,将靶材固定,基片自转或公自转工位变更为靶材可移动,基片自转的方式,并控制靶材的移动及基片自转速率的调节,可以用较小的靶材在较大平面上沉积膜层,所制备膜层具有良好的膜厚均匀性;建立了计算模型,分析了小靶材实现大平面基片均匀性膜层沉积的途径;在Φ260 mm的平片上进行了Ge膜的实际制备,证实了上述思路的可行性。

Uniformity area of layer thickness is limited because of the fixed target and work piece position for magnetron sput-tering equipments used in laboratory. A new method was proposed in order to resolve the problem of layer thickness uniformity on large-plane substrate by lesser target. Movements and rates of target and substrate were changed and controlled from fixed to re-movable. By developing calculating models, the theoretic analyses were presented and discussed,and the approaches were given. Ge films were deposited on Φ260 mm plane,and the method was proved.