期刊文献+

Reconfigurable dual-band low noise amplifier design and realization 被引量:1

Reconfigurable dual-band low noise amplifier design and realization
原文传递
导出
摘要 A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology. A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.
出处 《Journal of Semiconductors》 EI CAS CSCD 2014年第5期86-92,共7页 半导体学报(英文版)
基金 supported by the National High Technology Research and Development Program of China(No.2009AA01Z261) the National Science and Technology Major Special Project(Nos.2009ZX03007-001,2012ZX03001-019)
关键词 LNA RECONFIGURABLE DUAL-BAND IMT-A UWB CMOS LNA reconfigurable dual-band IMT-A UWB CMOS
  • 相关文献

参考文献12

  • 1Lin Y J, Hsu S S H, Jin J D, et al. A 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique. IEEE Microw Wireless Compon Lett, 2007, 17(3): 232.
  • 2Ismail A, Abidi A A. A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network. IEEE J Solid-State Cir- cuits, 2004, 39(12): 2269.
  • 3Wu S, Razavi B. A 900-MHz/1.8-GHz CMOS receiver for dual- band applications. IEEE J Solid-State Circuits, 1998, 33(12): 2178.
  • 4Dao V K, Choi B G, Park C S. A dual-band CMOS RF front-end for 2.4/5.2 GHz applications. IEEE Radio and Wireless Sympo- sium, 2007:145.
  • 5Yoo S S, Yoo H J. A compact dualband LNA using self-matched capacitor. RFIT2007-IEEE International Workshop on Radio- Frequency Integration Technology, Singapore, 2007:227.
  • 6Balemarthy D. Process variations and noise analysis on a miller capacitance. Advances in Computing, Control, and Yelecommu-nication Technologies, 2009:414.
  • 7E1-Nozahi M, Sanchez-Sinencio E, Entesari K. A CMOS low- noise amplifier with reconfigurable input matching network. IEEE Trans Microw Theory Tech, 2009, 7(5): 1054.
  • 8Khurram M, Rezaul H S M. A 3-5 GHz current-reuse gin-boosted CG LNA for ultrawideband in 130 nm CMOS. IEEE Trans Very Large Scale Integration (VLSI) Syst, 2012, 20(3): 400.
  • 9Hashemi H, Hajimiri A. Concurrent multiband low-noise amplifiers--theory, design, and applications. IEEE Trans Mi- crow Theory Tech, 2002, 50(1): 228.
  • 10Lee T H. The design of CMOS radio-frequency integrated cir- cuits. 2nd ed. USA Cambridge University Press, 2004.

同被引文献4

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部