氧化锆掺杂BaTiO_3陶瓷显微结构和介电性能研究

Dielectric Properties and Microstructures of ZrO_2 Doped BaTiO_3 Ceramics

为了改变纯钛酸钡陶瓷的介电性能,以钛酸钡和氧化锆为原料,通过固相烧结法制备了不同物质的量比氧化锆掺杂钛酸钡基介电陶瓷。利用X射线衍射仪、透反射偏光显微镜和安捷伦LCR仪分析了其显微组成、相结构和介电特性。实验表明:氧化锆的掺杂不改变钛酸钡的晶体结构,当频率保持不变时,改变氧化锆在BaTiO3陶瓷中的掺杂量不会影响介电峰的位置,只影响了峰值大小。当掺杂物质的量比保持不变时,改变频率对峰的位置影响较大,呈现出随着频率的增加向高温区移动,峰值由大到小再到大的现象。在100 Hz下,当掺杂物质的量比为1.08∶100时介电常数最大。

In order to have good dielectric properties,barium titanate-based dielectric ceramics doped ZrO2 with different molar ratio was prepared.The micrographs,phase structure and dielectric properties of ZrO2 doped BaTiO3 ceramics were observed by X-ray diffraction,BK-POLR reflection polarizing microscope and Agilent LCR meter.The experiment shows that the doping amount does not change the dielectric peak position at same frequency,but affects the peak height.The frequency may affect the peak site at same molar ratio greatly,the peak will move to high temperature region and the peak height from high to low and then to high.The dielectric constant is biggest at 100 Hz when the doping amount was 1.08 ∶ 100.