摘要
Two GaN p-(i)-n diodes were designed and fabricated,and their electrical performances with ^(63)Ni and ^(147)Pm plate sources were compared.The results showed that the diodes with ^(147)Pm had better electrical performances,with a short-circuit current(I_(sc)) of 59 nA,an open-circuit voltage(V_(oc)) of 1.4 V,and a maximum power(P_(max))of 49.4 nw.The ways to improve the electrical performances are discussed,including appropriate increase of the i-GaN thickness.
Two GaN p-（i）-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current （Isc） of 59 nA, an open-circuit voltage （Voc） of 1.4 V, and a maximum power （Pmax） of 49.4nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.
