磁控溅射工艺中靶材溅射功率对BCMg薄膜性能影响

Influence of sputtering power on properties of BCMg thin films prepared by magnetron sputtering

采用多靶磁控共溅射技术,利用高纯B、C及Mg单质靶材为溅射源,573K下在单晶Si(001)表面成功制备硬质非晶态BCMg薄膜.背散射扫描电镜(SEM)图显示薄膜成分均匀,与基体Si片结合良好.X射线光电子能谱(XPS)分析表明薄膜中存在B—B、B—C、C—Mg等键态.X射线衍射仪(XRD)及高分辨透射电镜(HRTEM)测试结果表明薄膜为非晶态结构.某单质靶材溅射功率提高时,沉积速率及相应元素在薄膜中的含量随之上升.随着薄膜中B含量增加,薄膜中B—B共价键数量增多,BCMg薄膜硬度与断裂韧性均上升.B含量为85%时,BCMg薄膜硬度及断裂韧性分别达到33.9GPa及3MPa·m1/2.

Hard amorphous BCMg thin films were successfully deposited on the surface of Si（001）via multi-target magnetron co-sputtering technique at 573K.High-purity B,C and Mg elemental disks were used as sputtering targets.Back scattering SEM image illustrates that deposited BCMg coating has a uniform component distribution and a well-adherence with Si substrate.XPS results reveal the existence of B—B,B—C and C—Mg bonds.XRD and HRTEM results show that the deposited films are in amorphous structure.With the augment of target power,the corresponding elemental content and the overall deposition rate are enlarged.As B content is raised,leading to the increase of covalent B—B bonds,both the hardness and fracture toughness of BCMg thin films increase.Especially,when the B content reaches 85%,the hardness and fracture toughness of BCMg thin film are respectively 33.9GPa and 3MPa·m1/2.