正交相BaSi_2薄膜的制备及结晶研究

Study on Preparation and Crystallization of Orthorhombic BaSi_2 Film

室温下采用磁控溅射的方法在p-Si（111）衬底上沉积Ba膜,然后置入高真空退火炉中在400～850℃退火12 h生成Ba的硅化物薄膜,对退火后的Ba-Si化合物进行了晶体结构、表面形貌、透射光谱及电学性质的测试分析,研究了退火温度对薄膜结晶的影响。实验结果表明,退火温度对生成Ba-Si化合物及薄膜的表面形貌影响很大,随着退火温度从400℃升高到800℃,薄膜的结晶情况逐渐改善,晶粒随着温度的升高逐渐增大;800℃对于生成多晶的BaSi2薄膜是一个比较理想的退火温度;850℃生成了多相共生的硅化物薄膜。

Ba layer was deposited on p-Si（111） substrate by magnetron sputtering at room temperature.Silicide films grew after the samples were annealed in the vacuum furnace for 12 h.The annealing temperature varys from 400 ℃ to 850 ℃.Crystal structure,surface morphology,transmission spectra and electricity property of the Ba-Si compounds were tested and analysed in detail The influence of annealing temperature on the growth of Ba-Si compounds was studied.The results show annealing temperature play an important effect on the formation of Ba-Si compounds and the surface features of the films.The crystallization of the films on silicon substrates is improved with the increasing of annealing temperature from 400 ℃ to 800 ℃.The higher the annealing temperature rises,the bigger the grain grows.800 ℃ is an optimal annealing temperature to prepare polycrystal BaSi2 film.Three barium silicides grew when annealed at 850 ℃.