摘要
立方 Ga As (10 0 )衬底上制备的 Ga N薄膜多为立方结构且立方相为亚稳相 ,采用水平常压 MOCVD方法在立方 Ga As (10 0 )衬底上制备出了 Ga N薄膜 . XRD测试表明 ,薄膜具有单一的相 .结合对工艺条件的分析 ,认为薄膜具有六方结构 .最后 ,通过 Raman光谱测试 ,证实在立方 Ga As衬底上制备出了单相六方 Ga N薄膜 .还对立方 Ga As衬底上制备出六方 Ga
Generally,GaN films prepared on cubic GaAs(100) substrates are of cubic structure and the cubic phase is a metastable phase.GaN films are prepared on GaAs(100)substrates by horizontal atmospheric pressure MOCVD.X ray diffraction and Raman scattering are employed to characterize the phase composition of films.Based on these experimental results and process conditions,it is believed that the film prepared at 700℃ on cubic GaAs(100) substrate is of single hexagonal phase GaN.Nanometer polycrystal buffer layer is the main cause of the crystal structure difference between film and substrate.
