HV/CVD系统Si、SiGe低温掺杂外延

Low Temperature Silicon and Silicon Germanium Doping Epitaxy by HV/CVD

研究了硼烷 (B2 H6 )掺杂锗硅外延和磷烷 (PH3)掺杂硅外延的外延速率和掺杂浓度与掺杂气体流量的关系 .B浓度与 B2 H6 流量基本上成正比例关系 ;生长了 B浓度直至 10 1 9cm- 3的多层阶梯结构 ,各层掺杂浓度均匀 ,过渡区约 2 0 nm,在整个外延层 ,Ge组分 (x=0 .2 0 )均匀而稳定 .PH3掺杂外延速率随 PH3流量增加而逐渐下降 ;P浓度在 PH3流量约为 1.7sccm时达到了峰值 (约 6× 10 1 8cm- 3) .分别按 PH3流量递增和递减的顺序生长了多层结构用以研究 PH3掺杂

Growth rate and doping concentration,as a function of the flow of doping gases of B 2H 6 doped SiGe epitaxy and PH 3 doped Si epitaxy,have been studied B concentration is basically proportional to the flow of B 2H 6 Si 0 8 Ge 0 2 multi layer films doped with B concentration up to 10 19 cm -3 have been grown and sharp doping transitions have been obtained,The Ge composition ( x =0 20) is stable and flat throughout the entire epi layer Growth rate of PH 3 doped Si epitaxy decreases with the flow of PH 3 and P concentration can reach a peak value of about 6×10 18 cm -3 when the flow of PH 3 is near 1 7sccm Si multi layer films with increased and decreased sequence of the flow of PH 3 have also been grown respectively to investigate the special characteristics of PH 3 doping silicon epitaxy