摘要
采用标准的湿法刻蚀工艺研制出了 S波段工作的非自对准 Al Ga As/ Ga As异质结双极晶体管 .对于总面积为 8× 2 μm× 10 μm的 HBT器件 ,测得其直流电流增益大于 10 ,电流增益截止频率 f T 大于 2 0 GHz,最高振荡频率fmax大于 30 GHz.连续波功率输出为 0 .3W,峰值功率附加效率 41%
W S band AlGaAs/GaAs HBTs for power application have been successfully fabricated with non self aligned process and wet etching technology.For the device size of 8×2μm×10μm,DC current gain is more than 10,current gain cutoff frequency, f T,is more than 20GHz and the maximum oscillation frequency, f max ,is more than 30GHz.The CW power output of 0 3W and the power added efficiency of 41% is demonstrated at S band (5GHz).
基金
国家自然科学基金资助项目 !(No:696760 3 3 )&&
