摘要
使用高阻 Si材料 ,通过氧化、光刻、注入和退火工艺技术研制粒子探测器—— PIN二极管 .采取 HCl氧化、慢降温等工艺措施可减小 PIN二极管的暗电流 (反向电流 ) ,这对于提高器件性能起到了关键作用 .电压为 - 5 V时 ,探测器的暗电流可达 n A/ cm2 量级 .
The fabrication of PIN silicon detector has been described in details with some advanced microelectronic technologies,including oxidation,lithography and implantation and annealing.Slowly decrease the temperature after HCl handling,a low dark current (reverse current) can be obtained.At -5V,the performanc of the detector is perfect,and the leakage current is 10nA/cm 2.The relationship between the dark current and the minority carrier lifetime has also been discussed,as well as the measuring method of the minority carrier lifetime.
